MMBD301M3T5G diode equivalent, silicon hot-carrier diode.
* Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
* Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
* Reduces Board Space
* These Devices are Pb−Fre.
It is readily adaptable to many other fast switching RF and digital applications and is housed in the SOT−723 surface m.
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